Fabrication of silicon micro mechanical structures

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S686000, C438S048000, C438S050000, C438S678000, C438S745000, C438S753000, C438S754000

Reexamination Certificate

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06949397

ABSTRACT:
A method for protecting a material of a microstructure comprising said material and a noble metal layer against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer having a lower redox potential than said material, the sacrificial metal layer being electrically connected to said noble metal layer.

REFERENCES:
patent: 5059556 (1991-10-01), Wilcoxen
patent: 5164339 (1992-11-01), Gimpelson

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