Fabrication of silicon devices requiring anisotropic etching

Details Fabrication of silicon devices requiring anisotropic etching Fabrication of silicon devices requiring anisotropic etching

1983-11-09

1984-09-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156657, 1566591, 156662, 252 795, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044708750

ABSTRACT:
A method for micromachining precise semiconductor features involving a pre-etch for establishing proper mask alignment. In one embodiment, the pre-etch utilizes a mask opening which has at least two edges oriented at a significant angle with the nominal (110) direction of a silicon wafer. The silicon is anisotropically etched through this opening until the true (110) lines are revealed by the intersection of the (111) planes with the wafer surface. Two parallel lines will therefore be formed to provide alignment of the mask for subsequent feature definition.
In a further embodiment, the silicon wafer is completely etched through so that a pit edge on the front surface is offset on the back surface by an amount equal to the wafer thickness. This provides front-to-back alignment in subsequent processing.

REFERENCES:
patent: 3765969 (1973-10-01), Kragness et al.
E. Bassous, Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon, IEEE Transactions on Electron Devices, vol. ED-25, No. 10, Oct. 1978, pp. 1178-1185.
U.S. Ser. No. 469,410, filed Feb. 24, 1983.

Affiliated with

Also associated with

Rating

Fabrication of silicon devices requiring anisotropic etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of silicon devices requiring anisotropic etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of silicon devices requiring anisotropic etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1193713