Semiconductor device manufacturing: process – Semiconductor substrate dicing – Beam lead formation
Reexamination Certificate
2005-12-06
2005-12-06
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Beam lead formation
C438S460000, C438S462000, C257S692000
Reexamination Certificate
active
06972243
ABSTRACT:
A method for forming a semiconductor die, comprising forming a trench in a surface of the die; filing the trench with a sacrificial material; patterning the die to form a series of channels extending substantially perpendicularly to the trench; depositing a conductive material in the channels; removing at least a portion of the sacrificial material; and removing portions of the die under the trench so as to separate a portion of the die on one side of the trench from a portion on another side of the trench. The sacrificial material may be patterned so that the channels extend so as to be partially in a portion of the die and partially a portion of the sacrificial material. A series of structures are formed having dies with micro-pins.
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Aker David
Chu Chris C.
International Business Machines - Corporation
Thomas Tom
Trepp Robert M.
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