Fabrication of self-aligned bipolar transistor

Details Fabrication of self-aligned bipolar transistor Fabrication of self-aligned bipolar transistor

2005-04-26

2005-04-26

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

Reexamination Certificate

active

06884689

ABSTRACT:
A method for fabricating a self-aligned bipolar transistor, wherein a substrate having an epitaxial layer formed thereon as a base is provided. After this, a first dielectric layer, a second dielectric layer are sequentially formed on the epitaxial layer, followed by forming an opening in the second dielectric layer. A conductive spacer is formed on the sidewall of the opening. Using the second dielectric layer and the conductive spacer as a mask, a first dielectric layer in the opening is removed. A conductive layer is then formed in the opening as an emitter, followed by completely removing the second dielectric layer. A doping is conducted on the emitter. Using the emitter and the conductive spacer as a mask, a part of the first dielectric layer is removed. Further using the emitter and the conductive spacer as a mask, another doping is conducted to form a part of the epitaxial layer as a base contact region.

REFERENCES:
patent: 20030012925 (2003-01-01), Gorrell

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