Fabrication of patterned silicon nitride insulating layers havin

Details Fabrication of patterned silicon nitride insulating layers havin Fabrication of patterned silicon nitride insulating layers havin

1978-04-24

1980-01-01

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 204192EC, 427 38, 427 88, 427 94, 427 95, H01L 21285, H01L 21306

Patent

active

041815645

ABSTRACT:
A method of forming patterned insulating layers such as silicon nitride for use in integrated circuit fabrication is disclosed. The insulating layer is formed by reactive plasma deposition while the temperature of the substrate is decreased. This diminishing temperature affects the etching characteristics of the layer such that when openings are formed by a selective plasma etching, the sidewalls will be sloped at an acute angle with the substrate even when the layer is overetched.

REFERENCES:
patent: 3652324 (1972-03-01), Chu et al.
patent: 3665548 (1972-05-01), Brack et al.
patent: 3675319 (1972-07-01), Smith
patent: 3769109 (1973-10-01), MacRae et al.
patent: 3795557 (1974-03-01), Jacob
patent: 3880684 (1975-04-01), Abe
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 3940506 (1976-02-01), Heinecke
patent: 3986912 (1976-10-01), Alcorn et al.
patent: 4022930 (1977-05-01), Fraser
patent: 4057895 (1977-11-01), Ghezzo
Rozich, "Reactive Etching of Silicon Nitride" IBM Technical Disclosure Bulletin. vol. 19, No. 11 (4/77) p. 4157.
Somekh, "Introduction . . . Etching " Journal of Vacuum Science Technology, vol. 13, No. 5 Sep./Oct. 1976 pp. 1003-1007.
Taft, "Characterization of Silicon Nitride Films", J. of The Electrochemical Society: Solid State Science, (8/71) 1341-1347.
Rosler et al., "A Production . . . Deposition" Solid State Technology (6/75) pp. 45-50.
Rand et al., "Optical Absorption . . . Deposition" J. of the Electrochemical Society.

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