Fabrication of nanoelectronic circuits

Semiconductor device manufacturing: process – Making field effect device having pair of active regions...

Reexamination Certificate

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Details

Other Related Categories

C438S622000, C438S637000, C438S800000, C438S525000, C257SE21404

Type

Reexamination Certificate

Status

active

Patent number

11132851

Description

ABSTRACT:
A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which extend down to the substrate only where the patterns cross over each other. These holes provide a mask suitable for implanting single phosphorous ions in the substrate, for a solid state quantum computer. Further development of the resist layers provides a mask for the deposition of nanoelectronic circuits, such as single electron transistors, aligned to the phosphorous ions.

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patent: 6582890 (2003-06-01), Dentinger et al.
patent: 6653054 (2003-11-01), Schiltz
patent: 23460009 (2000-07-01), None
patent: 2001-204978/21 (2000-11-01), None
R. Vrijen et al., “Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures”, Physical Review A, vol. 13, Article 012306, American Physical Society, New York, Jun. 13, 2000.

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