Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Patent
1998-06-11
2000-08-08
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
438601, H01L 2182
Patent
active
06100118&
ABSTRACT:
A method of fabricating a metal guard ring (e.g., 139 149 159) around for a metal fuse 141 and fuse opening 88. The metal fuse 41 is formed from a second metal layer (M2) (or M3 or M4, etc.) and is connected to an underlying polysilicon layer 22 by fuse interconnections 129A 129B. The method comprises:
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Huang Jenn Ming
Shih Cheng-Yeh
Ackerman Stephen B.
Chaudhari Chandra
Saile George O.
Stoffel William J.
Taiwan Semiconductor Manufacturing Company , Ltd.
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