Fabrication of large grain polycrystalline silicon film by...

Details Fabrication of large grain polycrystalline silicon film by... Fabrication of large grain polycrystalline silicon film by...

2011-04-19

2011-04-19

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21133, C257SE21134

Reexamination Certificate

active

07927937

ABSTRACT:
One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.

REFERENCES:
patent: 6727121 (2004-04-01), Joo et al.
patent: 2002/0055240 (2002-05-01), Naseem et al.
patent: 2004/0266080 (2004-12-01), Jyumonji et al.
Stephan et al. “Polymer etching and deposition of amorphous silicon using a VHF coaxial helix plasma source”, Surface and Coatings Technology (1999) 384-388.

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