Fabrication of isolation oxidation for MOS circuit

Details Fabrication of isolation oxidation for MOS circuit Fabrication of isolation oxidation for MOS circuit

1982-12-27

1983-10-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 156657, 1566591, 156662, 357 49, 427 93, B44C 122, C03C 1500, C03C 2506, H01L 21306

Patent

active

044076967

ABSTRACT:
A method is disclosed for fabricating an isolation oxidation (44), also referred to as field oxide, to separate the active regions on the surface of an MOS integrated circuit. On the surface of a semiconductor substrate (24) there are fabricated in successive layers an oxide layer (26), a polysilicon layer (28) and a nitride layer (30). A patterned resist layer (32) is formed on the surface of the nitride layer (30). The nitride layer (30) is etched through an opening (34) in the resist layer (32), which is then removed. The isolation oxidation (44) is then grown through an opening (36) in the nitride layer (30). The isolation oxidation (44) comprises oxide derived from the oxide layer (26) and from oxide produced from the polysilicon layer (28) and the semiconductor substrate (24). Next, the nitride layer (30), the polysilicon layer (28) and the oxide layer (26) are etched. The resulting isolation oxidation (44) has a bird's-beak area (46) which is less than 50% of the width of a bird'-beak area (14) produced using conventional MOS manufacturing processes.

REFERENCES:
patent: 3958040 (1976-05-01), Webb
patent: 4016007 (1977-04-01), Wada et al.
patent: 4053349 (1977-10-01), Simko
patent: 4181537 (1980-01-01), Ichinohe

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