Fabrication of image sensor with improved signal to noise ratio

Details Fabrication of image sensor with improved signal to noise ratio Fabrication of image sensor with improved signal to noise ratio

2011-08-16

2011-08-16

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE27064

Reexamination Certificate

active

07998782

ABSTRACT:
For fabricating an image sensor, an isolation structure is formed to define a first active region of a semiconductor substrate. A first transistor and a second transistor of a unit pixel are formed in the first active region. In addition, a threshold voltage lowering region is formed in a portion of the semiconductor substrate near a portion of the isolation structure abutting the second transistor in the first active region. The threshold voltage lowering region causes the second transistor to have a respective threshold voltage magnitude that is lower than for the first transistor. The threshold voltage lowering region is formed simultaneously with a passivation region in a second active region having a photodiode formed therein.

REFERENCES:
patent: 2006/0105489 (2006-05-01), Rhodes
Korean Patent Publication No. 1020060124888 to Ko, having Publication date of Dec. 6, 2006 (w/ English Abstract page).
Korean Patent Publication No. 1020070049411 to Lee, having Publication date of May 11, 2007 (w/ English Abstract page).
Korean Patent Publication No. 1020070050666 to Huh et al., having Publication date of May 16, 2007 (w/ English Abstract page).

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