Fabrication of high speed transistors by compensation implant ne

Details Fabrication of high speed transistors by compensation implant ne Fabrication of high speed transistors by compensation implant ne

1978-01-13

1979-04-24

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 20, 357 34, 357 91, H01L 21265, H01L 2972

Patent

active

041510097

ABSTRACT:
A high speed bipolar transistor is obtained by the use of ion implanted compensating impurities into the base region near the collector-base junction. This compensating implant significantly reduces the base width of the transistor with little reduction in total base charge. This results in a transistor which is reproducible and has a higher frequency response than those manufactured using standard semiconductor fabrication methods.

REFERENCES:
patent: 3006791 (1961-10-01), Webster, Jr.
patent: 3756873 (1973-09-01), Kaiser
patent: 4045251 (1977-08-01), Graul et al.
patent: 4047217 (1977-09-01), McCaffrey et al.
Payne et al., "Fully Ion-Implanted Bipolar Transistors" IEEE, vol. ED-21, 1974, 273.
Collins, "Effecting a High Collector Doping Gradient" IBM-TDB, 10 1967, 467.
Crowder et al., "Compensation ... of B. ... in Bipolar..." IBM-TDB, 15 1972, 956.
Aggarwel, "Emitter ... Impurity Concentrations" IBM-TDB, 19 (1976) 162.

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