Method involving pulsed light processing of semiconductor device

Details Method involving pulsed light processing of semiconductor device Method involving pulsed light processing of semiconductor device

1977-03-23

1979-04-24

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

219121L, 250492A, 357 91, H01L 2126

Patent

active

041510089

ABSTRACT:
A pulsed laser or flash lamp produces a short duration pulse of light for thermal processing of selected regions of a semiconductor device. The light pulse is directed towards the semiconductor device and irradiates selected surface regions of the device to be processed. Energy deposited by the light pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the light pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature and the remaining mass of the semiconductor device is not subjected to unnecessary or undesirable high temperature exposure.

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