Fabrication of group III-V nitrides on mesas

Details Fabrication of group III-V nitrides on mesas Fabrication of group III-V nitrides on mesas

1998-05-21

2000-12-19

Font, Frank G.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 45, 257 77, H01L 310312, H01S 500

Patent

active

06163557&

ABSTRACT:
Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes.

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