Fabrication of grooved semiconductor devices

Details Fabrication of grooved semiconductor devices Fabrication of grooved semiconductor devices

1984-06-15

1986-06-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29569L, 156653, 156655, 1566591, 1566611, 156662, 252 792, 357 17, 427 38, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045954542

ABSTRACT:
V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.

REFERENCES:
"Bilayer Taper Etching of Field Oxides and Passivation Layers", J. Electrochemical Society, vol. 127, No. 12, Dec. 1980, pp. 2687-2693, L. K. White.
"Tapered Windows in SiO.sub.2, Si.sub.3 N.sub.4, and Polysilicon Layers by Ion Implantation", J. of Electrochemical Society, vol. 128, Mar. 1981, pp. 617-619, J. Gotzlich et al.
"V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser" Electronics Letters, vol. 17, No. 13, Jun. 1981, pp. 465-467 H. Ishikawa et al.
"Chemical Etching of InGaAsP/InP DH Wafer", J. Electrochemical Society, vol. 129, No. 5, May 1982, pp. 1053-1062, S. Adachi et al.
"Material-Selective Chemical Etching in the System InGaAsP/InP, J. Electrochemical Society, vol. 126, No. 2, Feb. 1979, pp. 287-292, S. B. Phatak et al.
"Formation of a Long-Wavelength Buried-Crescent Laser Structure on Channelled Substrates", IEEE Proc., vol. 129, Pt. I, No. 6, Dec. 1982, pp. 209-213, D. L. Murrell et al.

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