Fabrication of gate dielectric in nonvolatile memories...

Details Fabrication of gate dielectric in nonvolatile memories... Fabrication of gate dielectric in nonvolatile memories...

2005-01-18

2005-01-18

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S337000, C257S368000

Reexamination Certificate

active

06844586

ABSTRACT:
In a nonvolatile memory, one or more peripheral transistor gates are formed from the same layer (140) as the select gate. The gate dielectric (130) for these peripheral transistors and the gate dielectric (130) for the select gates are formed simultaneously. In a nonvolatile memory, the gate dielectric (130) for the peripheral transistors and the gate dielectric (130) for the select gates (140) have the same thickness. Portions of the control gates (170) overlie the select gates.

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