Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-10-16
2010-11-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S758000, C438S761000, C438S763000, C438S800000, C977S780000, C977S840000, C257SE21487
Reexamination Certificate
active
07825037
ABSTRACT:
In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
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Brueck Steven R. J.
Xia Deying
Garber Charles D
MH2 Technology Law Group LLP
Roman Angel
STC.UNM
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