Fabrication of devices utilizing a wet etchback procedure

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156662, 252 793, 437 61, 437228, 437231, H01L 21265

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active

049884050

ABSTRACT:
Smoothing irregularities in a surface is accomplished by a wet-etchback technique. In this technique, a polysilicate composition is formed on a nonplanar substrate such as the surface of an integrated-circuit wafer. The polysilicate is etched away and the etching is continued into the underlying surface. As a result, a substantial smoothing of the surface is obtained.

REFERENCES:
patent: 4732658 (1988-03-01), Lee
patent: 4752505 (1988-06-01), Arac
patent: 4775550 (1988-10-01), Chu et al.
patent: 4806504 (1989-02-01), Cleeves
patent: 4826786 (1989-05-01), Merenda et al.
patent: 4885262 (1989-12-01), Ting et al.
A. C. Adams, VLSI Technology, 2nd ed., S. M. Sze, editor, McGraw-Hill, New York, 1988, Chapter 6.
L. F. Thompson and M. J. Bowden, Introduction to Microlithography, L. F. Thompson, et al., editors, ACS Symposium Series 219, American Chemical Society, Washington, D.C., 1983, Chapter 4.
Sze, supra, Chapters 4 and 5.

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