Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-03
2007-07-03
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S319000, C257SE29300
Reexamination Certificate
active
11321982
ABSTRACT:
In a nonvolatile memory, the select gates (144S) are formed from one conductive layer (e.g. polysilicon or polyside), and the wordlines (144) interconnecting the select gates are made from a different conductive layer (e.g. metal). The wordlines overlie an interlevel dielectric (310) formed over control gates (134). The dielectric thickness can be controlled to reduce the capacitance between the wordlines and the control gates. In some embodiments, the floating gates (120) are fabricated in a self-aligned manner using an isotropic etch of the floating gate layer.
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MacPherson Kwok & Chen & Heid LLP
ProMOS Technologies Inc.
Shenker Michael
Smoot Stephen W.
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