Fabrication of an EEPROM cell with emitter-polysilicon...

Details Fabrication of an EEPROM cell with emitter-polysilicon... Fabrication of an EEPROM cell with emitter-polysilicon...

2007-08-14

2007-08-14

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S326000, C257S378000, C257SE21696

Reexamination Certificate

active

11055504

ABSTRACT:
An EEPROM memory cell uses an emitter polysilicon film for fabricating shallow source/drain regions to increase a breakdown voltage of the wells. The wells are fabricated to be approximately 100 nm (0.1 micrometers (μm)) in depth with a breakdown voltage of approximately 14 volts or more. A typical breakdown voltage of a well in a bipolar process is approximately 10 volts. Due to the increased breakdown voltage achieved, EEPROM memory cells can be produced along with bipolar devices on a single integrated circuit chip and fabricated on a common semiconductor fabrication line.

REFERENCES:
patent: 4562639 (1986-01-01), McElroy
patent: 4612629 (1986-09-01), Harari
patent: 5248624 (1993-09-01), Icel et al.
patent: 6359318 (2002-03-01), Yamamoto et al.
patent: 6600188 (2003-07-01), Jiang et al.
patent: 2004/0051147 (2004-03-01), Panday et al.

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