Fabrication of aligned nanowire lattices

Details Fabrication of aligned nanowire lattices Fabrication of aligned nanowire lattices

2007-08-21

2010-06-01

Loke, Steven (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C977S762000, C977S840000

Reexamination Certificate

active

07727855

ABSTRACT:
Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-uniform elastic strains present on the surface of the film control the positions where nanocrystals will form on the film. The strains may be removed via annealing and alloying after the formation of nanocrystal arrays.

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