Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-10-02
2007-10-02
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S455000, C257SE27137, C257SE27144, C977S938000, C977S762000
Reexamination Certificate
active
11169470
ABSTRACT:
Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-uniform elastic strains present on the surface of the film control the positions where nanocrystals will form on the film. The strains may be removed via annealing and alloying after the formation of nanocrystal arrays.
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