Fabrication of abrupt ultra-shallow junctions

Details Fabrication of abrupt ultra-shallow junctions Fabrication of abrupt ultra-shallow junctions

2005-02-08

2005-02-08

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S564000

Reexamination Certificate

active

06852603

ABSTRACT:
One aspect of the invention relates to a method of forming P-N junctions within a semiconductor substrate. The method involves providing a temporary impurity species, such as fluorine, within the semiconductor crystal matrix prior to solid source in-diffusion of the primary dopant, such as boron. The impurity atom is a faster diffusing species relative to silicon atoms. During in-diffusion, the temporary impurity species acts to reduce the depth to which the primary dopant diffuses and thereby facilitates the formation of very shallow junctions.

REFERENCES:
patent: 4263056 (1981-04-01), Bensahel et al.
patent: 5602045 (1997-02-01), Kimura
patent: 6037640 (2000-03-01), Lee
P. Packan et al., “Modeling Solid Source Boron Diffusion for Advanced Transistor Applications” IEEE, IEDM 98, pp. 505-508.
Daniel F. Downey et al., “Effect of Fluorine on the Diffusion of Boron in Ion Implanted Si” 1998 American Institute of Physics, vol. 73, No. 9, Aug. 31, 1998, pp. 1263-1265.

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