Fabrication of a surface micromachined capacitive microphone usi

Details Fabrication of a surface micromachined capacitive microphone usi Fabrication of a surface micromachined capacitive microphone usi

1995-06-19

1996-11-12

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 56, 216 69, 1566431, 1566441, B44C 122

Patent

active

055736793

ABSTRACT:
Capacitive microphones are fabricated using etch-release of sacrificial silicon by an isotropic dry etchant. The process allows the production of a microphone largely from CVD processes with flexibility in materials selection. The dry etch chemistry does not require freeze-drying after release. The etchant does not attack electrodes or metallized circuitry and so allows the placement of the electrodes between the backplate and diaphragm dielectric layers. Diffusion barrier layers between the sacrificial and electrode layers protect both materials from interdiffusion during device fabrication. The process is especially fitting for a microphone comprising silicon nitride dielectric layers with aluminum electrodes.

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