Fabrication of a semiconductor nanoparticle embedded...

Details Fabrication of a semiconductor nanoparticle embedded... Fabrication of a semiconductor nanoparticle embedded...

2011-08-30

2011-08-30

Patel, Nimeshkumar D (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

C313S503000

Reexamination Certificate

active

08007332

ABSTRACT:
A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm2) at an applied electric field lower than 3 MV/cm. In another aspect, the annealed semiconductor nanoparticle embedded Si insulating film has an index of refraction (n) in a range of 1.8-3.0, as measured at 632 nm, with a current density of greater than 1 A/cm2at an applied electric field lower than 3 MV/cm.

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