Fabrication of a bipolar transistor using a sacrificial emitter

Details Fabrication of a bipolar transistor using a sacrificial emitter Fabrication of a bipolar transistor using a sacrificial emitter

2005-03-22

2005-03-22

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C257S198000

Reexamination Certificate

active

06869853

ABSTRACT:
In one embodiment, a transistor is fabricated by forming a sacrificial emitter over a base, forming an oxide layer over the sacrificial emitter, removing a portion of the oxide layer, and then removing the sacrificial emitter. An emitter is later formed in the space formerly occupied by the sacrificial emitter. The sacrificial emitter allows a base implant step to be performed early in the process using a single masking step. The base may comprise epitaxial silicon-germanium or silicon.

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