Fabrication methods of thin film transistor substrates

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S144000, C438S149000, C438S940000, C257S060000, C257SE51005, C257SE29273, C257SE21412

Reexamination Certificate

active

07968389

ABSTRACT:
Methods for manufacturing thin film transistor arrays utilizing three steps of lithography and one step of laser ablation while the lithography procedure is used four to five times in conventional processes are disclosed. The use of the disclosed methods assists in improving throughput and saving of manufacturing cost.

REFERENCES:
patent: 6605495 (2003-08-01), Kuo
patent: 2005/0041166 (2005-02-01), Yamazaki et al.
patent: 2007/0117280 (2007-05-01), Lee et al.
patent: 2007/0139571 (2007-06-01), Kimura
patent: 2007/0269937 (2007-11-01), Lin
patent: I275184 (2007-03-01), None
English abstract of TW I275184, pub. Mar. 1, 2007.

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