Fabrication methods for self-aligned LDD thin-film transistor

Details Fabrication methods for self-aligned LDD thin-film transistor Fabrication methods for self-aligned LDD thin-film transistor

2011-03-01

2011-03-01

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21413

Reexamination Certificate

active

07897445

ABSTRACT:
A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.

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