Fabrication method to produce pit-free polysilicon buffer local

Details Fabrication method to produce pit-free polysilicon buffer local Fabrication method to produce pit-free polysilicon buffer local

1994-05-31

1995-07-04

Dang, Thi

Etching a substrate: processes

Nongaseous phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

252 792, 216 99, H01L 2100

Patent

active

054297141

ABSTRACT:
A method of forming a silicon oxide isolation region on the surface of a silicon wafer consisting of a thin layer of silicon oxide on the wafer, a layer of impurity-doped polysilicon, and a layer of silicon nitride. The oxidation mask is formed by patterning the silicon nitride layer and at least a portion of the doped polysilicon layer. The silicon oxide field isolation region is formed by subjecting the structure to a thermal oxidation ambient. The oxidation mask is removed in one continuous etching step using a single etchant, such as phosphoric acid which etches the silicon nitride and polysilicon layers at substantially the same rate to complete the formation of the isolation region without pitting the monocrystalline substrate.

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patent: 5286668 (1994-02-01), Chou
patent: 5338750 (1994-08-01), Tuan et al.

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