Fabrication method of two-terminal semiconductor component...

Details Fabrication method of two-terminal semiconductor component... Fabrication method of two-terminal semiconductor component...

2009-10-22

2011-11-01

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S669000, C438S677000, C438S679000, C438S680000, C438S694000

Reexamination Certificate

active

08048800

ABSTRACT:
A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.

REFERENCES:
patent: 4339870 (1982-07-01), Ball et al.

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