Fabrication method of thin film transistor

Details Fabrication method of thin film transistor Fabrication method of thin film transistor

2006-02-28

2006-02-28

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

07005332

ABSTRACT:
A TFT fabrication method includes: forming a gate insulation layer, a semiconductor layer and a metal layer on a substrate in sequence, which cover a gate; patterning the metal layer and the semiconductor layer; forming a patterned first passivation layer on the substrate and exposing the patterned metal layer; forming a pixel electrode layer on the substrate to cover the patterned first passivation layer and the patterned metal layer; forming a patterned photoresist layer on the substrate and exposing the pixel electrode layer above the gate; etching the pixel electrode layer and the patterned metal layer to form a patterned pixel electrode layer, a source, and a drain to form a channel region on the patterned semiconductor layer; forming a second passivation layer on the substrate; and removing the patterned photoresist layer to lift off the second passivation layer, thereby exposing the patterned pixel electrode layer.

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