Fabrication method of thin film transistor

Details Fabrication method of thin film transistor Fabrication method of thin film transistor

2008-07-29

2008-07-29

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S159000

Reexamination Certificate

active

07405113

ABSTRACT:
A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.

REFERENCES:
patent: 6107668 (2000-08-01), Ukita
patent: 7291885 (2007-11-01), Wu et al.

Affiliated with

Also associated with

Rating

Fabrication method of thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2810456