Fabrication method of sub-resolution pitch for integrated...

Details Fabrication method of sub-resolution pitch for integrated... Fabrication method of sub-resolution pitch for integrated...

2005-03-15

2005-03-15

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S761000, C438S734000, C438S735000, C438S736000, C438S737000, C438S738000

Reexamination Certificate

active

06867116

ABSTRACT:
A method of manufacturing a semiconductor device using a scanner, wherein the scanner is capable of realizing a minimum pitch, wherein the minimum pitch is the smallest possible pitch for the scanner, the method including providing a semiconductor substrate, forming a first layer over the semiconductor substrate, forming a second layer over the first layer, patterning the second layer to form a plurality of second layer patterns, patterning the first layer to form a plurality of first layer patterns, performing a tone reversal to form a reversed tone for the second layer patterns, and etching the first layer patterns using the reversed tone as a mask, wherein the etched first layer patterns have a final pitch size, and wherein the final pitch is smaller than the minimum pitch.

REFERENCES:
patent: 5811345 (1998-09-01), Yu et al.
patent: 5911110 (1999-06-01), Yu
patent: 6110837 (2000-08-01), Linliu et al.
patent: 6537866 (2003-03-01), Shields et al.
patent: 6576536 (2003-06-01), Babcock
patent: 20040087092 (2004-05-01), Huang et al.
patent: 20040087123 (2004-05-01), Ahn et al.

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