Fabrication method of semiconductor integrated circuit device

Details Fabrication method of semiconductor integrated circuit device Fabrication method of semiconductor integrated circuit device

2007-08-07

2007-08-07

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C210S650000, C210S651000, C210S663000, C210S669000, C134S201000

Reexamination Certificate

active

11062615

ABSTRACT:
Provided is a fabrication method of a semiconductor integrated circuit device, which comprises disposing, in a ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, the present invention makes it possible to prevent run-off of ionized amine into the ultrapure water.

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