Fabrication method of semiconductor integrated circuit device

Details Fabrication method of semiconductor integrated circuit device Fabrication method of semiconductor integrated circuit device

2007-07-31

2007-07-31

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S692000, C257SE21237, C257SE21304

Reexamination Certificate

active

11167253

ABSTRACT:
A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

REFERENCES:
patent: 5868857 (1999-02-01), Moinpour et al.
patent: 5874778 (1999-02-01), Bhattacharyya et al.
patent: 5901399 (1999-05-01), Moinpour et al.
patent: 5976267 (1999-11-01), Culkins et al.
patent: 6059889 (2000-05-01), Jensen et al.
patent: 6150696 (2000-11-01), Iwamatsu et al.
patent: 6159081 (2000-12-01), Hakomori
patent: 6232201 (2001-05-01), Yoshida et al.
patent: 6261953 (2001-07-01), Uozumi
patent: 6267649 (2001-07-01), Lai et al.
patent: 6309981 (2001-10-01), Mayer et al.
patent: 6334229 (2002-01-01), Moinpour et al.
patent: 6361708 (2002-03-01), Kubo et al.
patent: 6376363 (2002-04-01), Iguchi
patent: 6482749 (2002-11-01), Billington et al.
patent: 6509270 (2003-01-01), Held
patent: 6683007 (2004-01-01), Yamasaki et al.
patent: 6924236 (2005-08-01), Yano et al.
patent: 2001/0024691 (2001-09-01), Kimura et al.
patent: 2001/0051432 (2001-12-01), Yano et al.
patent: 2002/0006876 (2002-01-01), Hongo et al.
patent: 1 167 583 (2002-01-01), None
patent: 1 174 912 (2002-01-01), None
patent: 64-71656 (1989-03-01), None
patent: 4-034931 (1992-02-01), None
patent: 5-41449 (1993-02-01), None
patent: 09-186234 (1997-07-01), None
patent: 10-296641 (1998-11-01), None
patent: 10-309666 (1998-11-01), None
patent: 10-328989 (1998-12-01), None
patent: 11-033888 (1999-02-01), None
patent: 11-045868 (1999-02-01), None
patent: 11-048109 (1999-02-01), None
patent: 11-090803 (1999-04-01), None
patent: 11-104942 (1999-04-01), None
patent: 2000-021882 (2000-01-01), None
patent: 2000-68273 (2000-03-01), None
patent: 2000-77414 (2000-03-01), None
patent: 2000-173885 (2000-06-01), None
patent: 2001-77113 (2001-03-01), None
Official Action from the Japanese Patent Office, for Japanese Patent Application No. 2001-118413, dated Jan. 30, 2007.

Affiliated with

Also associated with

Rating

Fabrication method of semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3807614