Fabrication method of semiconductor integrated circuit...

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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C438S014000

Reexamination Certificate

active

06974710

ABSTRACT:
A method of fabricating a semiconductor integrated circuit device includes performing a wafer process to a plurality of wafers so as to form a plurality of semiconductor integrated circuit devices over each of the wafers, performing a first electrical test to a first set of wafers selected from the plurality of wafers formed in the wafer process and accommodated in a first wafer cassette placed in a wafer prober, and performing a second electrical test to a second set of wafers selected from the plurality of wafers formed in the wafer process and accommodated in a second wafer cassette placed in the wafer prober by automatically changing a test object to the second set of wafers.

REFERENCES:
patent: 5834838 (1998-11-01), Anderson
patent: 6124725 (2000-09-01), Sato
patent: 6137303 (2000-10-01), Deckert
patent: 5-136219 (1993-06-01), None
patent: 5-343497 (1993-12-01), None

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