Fabrication method of semiconductor device with gettering treatm

Details Fabrication method of semiconductor device with gettering treatm Fabrication method of semiconductor device with gettering treatm

1998-01-29

2000-07-18

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Gettering of semiconductor substrate

438275, 438471, 438473, 438795, 438152, 438310, 438402, H01L 21263, H01L 21322, H01L 21336

Patent

active

060906456

ABSTRACT:
A fabrication method of a semiconductor device capable of effective gettering treatment even when electronic elements are further miniaturized and further integrated and a semiconductor substrate or wafer is upsized. First, a single-crystal silicon substrate having a p-type gettering layer in its interior is prepared. Transistors are formed at the main surface of the substrate. An interlayer dielectric layer is formed to cover the transistors. Contact holes are formed in the interlayer dielectric layer to uncover specific positions of the respective transistors. The substrate is rapidly heated to a first temperature of 700.degree. C. to 850.degree. C. at a heating rate. The substrate is gradually cooled from the first temperature to a second temperature of approximately 600.degree. C. at a cooling rate. Metallic wiring lines are formed on the interlayer dielectric layer to electrically connected to the respective transistors through the corresponding contact holes. The target metallic impurity existing in and entered into the interior of the substrate is trapped by the gettering layer during the gradual cooling step.

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patent: 5788763 (1998-08-01), Hayashi et al.

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