Fabrication method of semiconductor device having a barrier...

Details Fabrication method of semiconductor device having a barrier... Fabrication method of semiconductor device having a barrier...

2011-05-03

2011-05-03

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S622000, C438S625000

Reexamination Certificate

active

07935624

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming an opening defined by an inner wall surface in an insulation film, forming a Cu—Mn alloy layer in the opening, depositing a Cu layer on the Cu—Mn alloy layer and filling the opening with the Cu layer, and forming a barrier layer as a result of reaction between Mn atoms in the Cu—Mn alloy layer and the insulation film, wherein the step of forming the barrier layer is conducted by exposing the Cu layer to an ambient that forms a gaseous reaction product when reacted with Mn.

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