Fabrication method of semiconductor device equipped with silicid

Details Fabrication method of semiconductor device equipped with silicid Fabrication method of semiconductor device equipped with silicid

1998-10-09

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438303, 438301, 438664, 438655, 438682, 438651, 438649, 438592, H01L 2144, H01L 214763

Patent

active

061272671

ABSTRACT:
A fabrication method of a semiconductor device is provided, which makes it possible to form a thin and elongated refractory-metal silicide layer while preventing the overgrowth phenomenon. This method is comprised of the steps (a) to (c). In the step (a), a first refractory metal film is formed on a silicon region. In the step (b), a second refractory metal film is formed on the first refractory metal film. The second refractory metal film contains a same refractory metal as the first refractory metal film and nitrogen. A stress of the second refractory metal film is controlled to be a specific value or lower. In the step (c), the first refractory metal film and the second refractory metal film are heat-treated in an atmosphere excluding nitrogen, thereby forming a refractory-metal silicide layer at an interface between the silicon region and the first refractory metal film due to silicidation reaction of the first refractory metal film with the silicon region. The value of the stress of the second refractory metal film is set so that the second refractory metal film applies substantially no effect to a plastic deformation of the refractory-metal silicide layer occurring during the silicidation reaction in the step (c).

REFERENCES:
patent: 5326724 (1994-07-01), Wei
patent: 5451545 (1995-09-01), Ramaswami et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5902129 (1999-05-01), Yoshikawa et al.
patent: 5920122 (1999-07-01), Matsumoto et al.
patent: 6008111 (1999-12-01), Fushida et al.
patent: 6022795 (2000-02-01), Chen et al.

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