Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-03-12
1998-09-15
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438586, 438595, 438664, 438655, 438682, 438683, 438152, H01L 21336, H01L 2184
Patent
active
058077707
ABSTRACT:
A fabrication method of a semiconductor device that enables to produce a thin film of a refractory-metal silicide at a semiconductor active film without raising any defects such as agglomeration, cracks and voids. A semiconductor active film with a thickness of at most 500 .ANG. is formed on an insulating substructure. A gate insulator film and a gate electrode are formed on the active film. An impurity is selectively doped into the active film to form source and drain regions. The remaining semiconductor active film between the source and drain regions constitutes a channel region. A refractory-metal film is formed to cover the gate electrode and the source and drain regions and is heat-treated, producing first and second silicide films through silicidation reaction of the semiconductor active film with the refractory-metal film as parts of the source and drain regions. Preferably, the refractory-metal film has a thickness of (1/2) to (1/5) times as much as that of the semiconductor active film.
REFERENCES:
patent: 5252502 (1993-10-01), Havemann
patent: 5407837 (1995-04-01), Eklund
patent: 5449642 (1995-09-01), Tan et al.
NEC Corporation
Wilczewski Mary
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