Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-05-24
2005-05-24
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S507000
Reexamination Certificate
active
06897129
ABSTRACT:
Gases for film formation are introduced from a plurality of holes provided at a gas nozzle into a processing chamber of a batch-type CVD film-forming apparatus to cause a turbulence of the gases within the processing chamber. In the state where the chamber is kept at a pressure within an atmospheric and quasi-atmospheric pressure region, a silicon-germanium film is epitaxially grown on a semiconductor wafer placed within the processing chamber. Subsequently, a strained silicon film is epitaxially grown on the silicon-germanium film. Thereafter, a semiconductor element is formed in the semiconductor wafer on which the silicon-germanium film and the strained silicon film have been formed, respectively.
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Hirasawa Wataru
Kondo Yasuichi
Sugii Nobuyuki
Miles & Stockbridge P.C.
Mulpuri Savitri
Renesas Eastern Japan Semiconductor Inc.
Renesas Technology Corp.
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