Fabrication method of semiconductor device

Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S460000, C438S465000, C228S180220

Reexamination Certificate

active

07629231

ABSTRACT:
A technique with which die bonding can be carried out without forming a void in a bond area is provided. A vacuum supply line that connects to a vacuum chuck hole formed in the bottom face of a vacuuming collet and supplies the vacuuming collet with reduced pressure for vacuum chucking a chip is constructed of two systems. That is, the vacuum supply line is so structured that a first pipe and a second pipe connect to the vacuuming collet. The first pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is unstuck from a dicing tape and transported to a mounting position on a wiring substrate. The second pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is mounted over a wiring substrate. The intensity of the vacuum (suction force) supplied to the vacuuming collet is controlled by opening or closing valves respectively installed in the pipes.

REFERENCES:
patent: 6619535 (2003-09-01), Imanishi et al.
patent: 7015071 (2006-03-01), Wada et al.
patent: 7115482 (2006-10-01), Maki et al.
patent: 2005/0059205 (2005-03-01), Maki et al.
patent: 2005/0061856 (2005-03-01), Maki et al.
patent: 1 321 966 (2003-06-01), None
patent: 2002-280398 (2002-09-01), None
patent: 2003-203964 (2003-07-01), None
patent: 2004-6599 (2004-01-01), None
patent: 2004-022995 (2004-01-01), None
patent: 2004-128339 (2004-04-01), None
patent: 2004-228255 (2004-08-01), None
patent: 2004-304066 (2004-10-01), None
patent: 2005-093838 (2005-04-01), None
patent: 2005-117019 (2005-04-01), None
patent: 2005-150311 (2005-06-01), None
patent: 2005-322815 (2005-11-01), None
patent: 2006-24729 (2006-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4147306

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.