Fabrication method of semiconductor device

Details Fabrication method of semiconductor device Fabrication method of semiconductor device

1986-09-03

1987-09-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566611, 156662, 357 34, 357 43, 437235, 437241, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046937820

ABSTRACT:
A method of fabrication of a semiconductor device by forming a thin film pattern in the emitter region, forming a base lead-out electrode self-aligningly by using this thin film pattern, and also forming a fine graft base region and emitter region, and an oxide film for isolating the emitter region and base region, whereby the emitter diffusion layer and active base diffusion layer are formed in a shallow depth of diffusion by heat diffusion from the semiconductor film in which ions are implanted.

REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 4484388 (1984-11-01), Iwasaki
patent: 4486942 (1984-12-01), Hirao

Affiliated with

Also associated with

Rating

Fabrication method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1383068