Fabrication method of semiconductor accelerometer

Details Fabrication method of semiconductor accelerometer Fabrication method of semiconductor accelerometer

1995-04-27

1997-05-13

Schilling, Richard L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 8, 216 2, C23F 100, C03C 1500, C03C 2506, H01L 21306

Patent

active

056292449

ABSTRACT:
Using a p-type silicon substrate 1 having on its front surface an n-type silicon layer 2 with a thickness of twice or more of the desired thickness for the beam, an electrochemical etching is performed from the rear surface and the etching is stopped at the beam thickness which is twice or more of the desired thickness. Etching for the beam part 8 from the rear surface proceeds along with the etching for the gap part 9 from the front surface, and a desired thickness for the beam can be formed by completing the etching at the timing when the gap part is opened through.

REFERENCES:
patent: 4670092 (1987-06-01), Motamedi
Lynn M. Roylance et al., "A Batch-Fabricated Silicon Accelerometer", IEEE Electron Devices, vol. ED-26, No. 12, Dec. 1979, pp. 1911-1917.

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