Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2010-12-03
2011-12-13
Le, Thao (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C257S034000, C438S149000
Reexamination Certificate
active
08076221
ABSTRACT:
A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside the patterned polysilicon layer forms a source and a drain. A gate insulation layer is formed on the substrate to cover the source, the drain and the patterned polysilicon layer. A gate is formed on the gate insulation layer over the patterned polysilicon layer.
REFERENCES:
patent: 2006/0246640 (2006-11-01), Kuwashima et al.
patent: 2007/0065996 (2007-03-01), Sato et al.
patent: 2007/0148831 (2007-06-01), Nagata et al.
Au Optronics Corporation
Jianq Chyun IP Office
Le Thao
LandOfFree
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