Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array
Reexamination Certificate
2008-07-01
2008-07-01
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Making emissive array
C438S022000, C438S493000, C257SE21131, C372S044010, C372S050121
Reexamination Certificate
active
11247935
ABSTRACT:
The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
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Choi Seok Beom
Han Sang Heon
Kim Chang Zoo
Kim Jin Chul
Kim Tae Jun
Jr. Carl Whitehead
Kim Sun M
Samsung Electro-Mechanics Co. Ltd
Volpe and Koenig P.C.
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