Fabrication method of isolation structure photodiode

Details Fabrication method of isolation structure photodiode Fabrication method of isolation structure photodiode

1999-07-13

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

438221, 438296, 438427, H01L 21339

Patent

active

061401560

ABSTRACT:
A method for fabricating a photodiode is described in which a pad oxide layer and a silicon nitride layer are sequentially formed on a provided substrate. The silicon nitride layer, and the pad oxide layer and the substrate are sequentially patterned to form an opening in the substrate. A spacer is formed on the sidewall of the opening. With the spacer and the silicon nitride layer serving as a mask, the substrate is etched forming a trench in the substrate. An oxide plug is then formed filling the trench and the opening using the conventional shallow trench fabrication method. A P-well region and an N-well region are formed respectively on two sides of the trench. An N+ type region and a P+ type region are formed respectively on two sides of the opening; wherein the N+ type region is located above the P-well region and the P+ type region is located above the N-well region

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patent: 5298450 (1994-03-01), Verret
patent: 5874317 (1999-02-01), Stolmeijer
patent: 5895253 (1999-04-01), Akram

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