Fabrication method of gate electrode in semiconductor device

Details Fabrication method of gate electrode in semiconductor device Fabrication method of gate electrode in semiconductor device

1997-07-10

1999-01-19

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438182, H01L 21338

Patent

active

058613277

ABSTRACT:
A fabrication method of a semiconductor device is disclosed. A T-shaped gate used for decreasing the gate resistance is adopted in fabricating an ultrahigh frequency and low-noise device. According to the present invention, a gate pattern is formed by a dual exposure technique, a thin metal film is formed, a pattern for plating is formed, and a gate is formed by electroplating, whereby decreasing a gate length and gate resistance. Therefore, the cost of production is decreased, the yield is improved, and the noise figure is minimized.

REFERENCES:
patent: 5563079 (1996-10-01), Shin et al.

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