Fabrication method of contact window in semiconductor device

Details Fabrication method of contact window in semiconductor device Fabrication method of contact window in semiconductor device

1990-10-23

1991-12-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437978, 437979, 148DIG43, H01L 21265

Patent

active

050735101

ABSTRACT:
According to the present invention, the incomplete silicon exposure is prevented by the sufficient overetching after the formation of an etching-stop layer on an oxide layer for protecting a conductive layer from the damage of the protective oxide layer when the self-aligned contact window is formed. Therefore, the thickness of the protective oxide layer can be minimized, and the bend of the chip can be improved whereby the following process will be accomplished easily.

REFERENCES:
patent: 4080719 (1978-03-01), Wilting
patent: 4503601 (1985-03-01), Chiao
patent: 4810666 (1989-03-01), Taji

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