Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-15
2008-07-15
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C257SE21011
Reexamination Certificate
active
07399704
ABSTRACT:
In the case where a contact hole is formed by a conventional process of the semiconductor device fabrication, a resist is required to be formed almost entirely over a substrate in order to form the resist over the film where the contact hole is not formed. Accordingly, the throughput is considerably low. Further, when the resist spreads to the area of the contact hole when the amount of the resist to be applied and the surface state of the base are not fully controlled, contact defect would occur. Thus, improvements are required. According to the invention, in forming a semiconductor device, a part to be a contact hole of the semiconductor device may be covered with a first organic film that is liquid repellent. Subsequently, a second organic film serving as an insulating film is formed on the area where the first organic film is not formed, and the first organic film is removed thereafter to form a contact hole.
REFERENCES:
patent: 5247375 (1993-09-01), Mochizuki et al.
patent: 5483082 (1996-01-01), Takizawa et al.
patent: 5580796 (1996-12-01), Takizawa et al.
patent: 5610414 (1997-03-01), Yoneda et al.
patent: 5908721 (1999-06-01), Emoto et al.
patent: 5939771 (1999-08-01), Usami et al.
patent: 6429400 (2002-08-01), Sawada et al.
patent: 6660545 (2003-12-01), Furusawa
patent: 6715871 (2004-04-01), Hashimoto et al.
patent: 2002/0014470 (2002-02-01), Okada et al.
patent: 2002/0046681 (2002-04-01), Hirose
patent: 2002/0046682 (2002-04-01), Fan et al.
patent: 2002/0128515 (2002-09-01), Ishida et al.
patent: 2002/0151171 (2002-10-01), Furusawa
patent: 2002/0182890 (2002-12-01), Ishida et al.
patent: 2003/0030689 (2003-02-01), Hashimoto et al.
patent: 2003/0054653 (2003-03-01), Yamazaki et al.
patent: 2003/0059975 (2003-03-01), Sirringhaus et al.
patent: 2003/0059984 (2003-03-01), Sirringhaus et al.
patent: 2003/0059987 (2003-03-01), Sirringhaus et al.
patent: 2003/0060038 (2003-03-01), Sirringhaus et al.
patent: 2003/0148401 (2003-08-01), Agrawal et al.
patent: 2004/0050685 (2004-03-01), Yara et al.
patent: 2004/0075396 (2004-04-01), Okumura et al.
patent: 2005/0001967 (2005-01-01), Chae et al.
patent: 2005/0005799 (2005-01-01), Hirai
patent: 2005/0007398 (2005-01-01), Hirai
patent: 2005/0025880 (2005-02-01), Masuda
patent: 2005/0043186 (2005-02-01), Maekawa et al.
patent: 2005/0051770 (2005-03-01), Ando et al.
patent: 2005/0158665 (2005-07-01), Maekawa et al.
patent: 2005/0170565 (2005-08-01), Fujii et al.
patent: 1158005 (1997-08-01), None
patent: 1340838 (2003-09-01), None
patent: 06-202153 (1994-07-01), None
patent: 07-024579 (1995-01-01), None
patent: 09-320363 (1997-12-01), None
patent: 10-112499 (1998-04-01), None
patent: 11-326951 (1999-11-01), None
patent: 11-340129 (1999-12-01), None
patent: 11-340219 (1999-12-01), None
patent: 2000-039213 (2000-02-01), None
patent: 2000035511 (2000-02-01), None
patent: 2000-068233 (2000-03-01), None
patent: 2001-068827 (2001-03-01), None
patent: 2001-093871 (2001-04-01), None
patent: 2001-179167 (2001-07-01), None
patent: 2002-066391 (2002-03-01), None
patent: 2002-151478 (2002-05-01), None
patent: 2002-151524 (2002-05-01), None
patent: 2002-237463 (2002-08-01), None
patent: 2002-237480 (2002-08-01), None
patent: 2002-289864 (2002-10-01), None
patent: 2002-324966 (2002-11-01), None
patent: 2002-359246 (2002-12-01), None
patent: 2002-359347 (2002-12-01), None
patent: 2003-017413 (2003-01-01), None
patent: 2003-197531 (2003-07-01), None
patent: 2003-311197 (2003-11-01), None
patent: 2003-347284 (2003-12-01), None
patent: WO 01/11426 (2001-02-01), None
patent: WO-01-47044 (2001-06-01), None
patent: WO-02-40742 (2002-05-01), None
patent: WO-2004-70809 (2004-08-01), None
patent: WO-2004-70810 (2004-08-01), None
patent: WO-2004-70811 (2004-08-01), None
patent: WO-2004-70819 (2004-08-01), None
patent: WO-2004-70820 (2004-08-01), None
patent: WO-2004-70821 (2004-08-01), None
patent: WO-2004-70822 (2004-08-01), None
patent: WO-2004-70823 (2004-08-01), None
patent: WO-2005-022262 (2005-03-01), None
Tetsuo Tsutsui et al., “Electroluminescence in Organic Film Films”, Photochemical Processes in Organized Molecular Systems, 1991, pp. 437-450.
M.A. Baldo et al., “Highly efficient phosphorescent emission from organic electroluminescent devices”, Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
M.A. Baldo et al., “Very high-efficiency green organic light-emitting devices based on electrophosphorescence”, Applied Physics Letters, Jul 5, 1999, vol. 75, No. 1, pp. 4-6.
Tetsuo Tsutsui et al., “High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center”, Jpn. J. Appl. Phys., vol. 38 (1999), Part 2, No. 12B, Dec. 15, 1999, pp. L1502-L1504.
Office Action from Patent Office of the People's Republic of China for Application No. 200410083142.5, dated Sep. 14, 2007.
Fujii Gen
Maekawa Shinji
Costellia Jeffrey L.
Estrada Michelle
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Stark Jarrett J
LandOfFree
Fabrication method of a semiconductor device using liquid... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of a semiconductor device using liquid..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of a semiconductor device using liquid... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2755216