Fabrication method of a semiconductor device

Details Fabrication method of a semiconductor device Fabrication method of a semiconductor device

2008-07-08

2008-07-08

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C257S059000, C257S072000, C257S347000, C257SE21413

Reexamination Certificate

active

07396707

ABSTRACT:
A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.

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